ssf 3056c ? silikron semiconductor co.,ltd. 2011.0 7 . 1 5 version : 1.0 preliminary page 1 of 6 www.silikron.com main product characteristics: features a nd benefits: description: absolute max rating: symbol parameter max. units n - channel p - channel i d @ tc = 25c continuous drain current, v gs @ 4.5 v 5 - 4.5 a i d @ tc = 100c continuous drain current, v gs @ 4.5 v 4.2 - 3.4 i dm pulsed drain current 18.8 - 12.5 p d @tc = 25c power dissipation 2. 1 1.8 w v ds drain - source voltage 30 - 30 v v gs gate - to - source voltage 12 12 v t j t stg operating junction and storage temperature range - 55 to + 1 50 - 55 to + 1 50 c nmos pmos v dss 30v - 30 v r ds (on) 37mohm(typ.) 6 8 mohm(typ.) i d 5a - 4.5 a dfn 2 x 3 - 8l bottom view schematic diagram ? advanced trench mosfet process techn ology ? special designed for buck - boost circuit , dsc, p ortable devices and general purpose applications ? ultra low on - resistance with low gate charge ? 1 50 operating temperature it utilizes the latest trench processing techniques to ach ieve the high cell den sity and reduces the on - resistance with high repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in buck - boost circuit, dsc, portable devices and a wide variety of others applications nmos pmos s1 g1 g2 s2 d1 d1 d2 d2 nmos pmos s1 g1 g2 s2 d1 d1 d2 d2
ssf 3056c ? silikron semiconductor co.,ltd . 2011.0 7 . 1 5 version : 1.0 preliminary page 2 of 6 www.silikron.com thermal resistance symbol characterizes typ. max. units n - channel p - channel r ja junction - to - ambient ( t 10s) 60 95 /w junction - to - ambient (pcb mounted, steady - state) 40 40 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v (br)dss drain - to - source breakdown voltage n - channel 30 v v gs = 0v, id = 250a 27.5 t j = 125 c p - channel - 30 v gs = 0v, id = - 250a - 27.5 t j = 125 c r ds(on) static drain - to - source on - resistance n - channel 37 55 m v gs = 4. 5 v,i d = 4.8 a p - channel 68 85 v gs = - 4.5 v,i d = - 2.3 a n - channel 50 90 v gs = 3.5 v,i d = 3.8 a p - channel 84 115 v gs = - 3.5 v,i d = - 1.8 a v gs(th) gate threshold voltage n - channel 0.7 1.48 2 v v ds = v gs , i d = 250 a p - channel 0.7 1.12 2 t j = 125 c n - channel - 0. 7 - 1.49 - 2 v ds = v gs , i d = - 250 a p - channel - 0 . 7 - 1.26 - 2 t j = 125 c i dss drain - to - source leakage current n - channel 1 a v ds = 30 v,v gs = 0v p - channel - 1 v ds = - 30 v,v gs = 0v i gss gate - to - source forward leakage n - c hannel 1 00 na v gs = 12 v n - channel - 1 00 v gs = - 12 v p - channel 1 00 v gs = 12 v p - channel - 1 00 v gs = - 12 v source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 5 a mosfet symbol showing the integral reverse p - n junction diode. - 4.5 i sm pulsed source current ( body diode ) 18.8 a - 12.5 v sd diode forward voltage 0.8 2 1. 2 v i s = 2.4 a, v gs =0v - 0.84 - 1.2 i s = - 1.5 a, v gs =0v
ssf 3056c ? silikron semiconductor co.,ltd . 2011.0 7 . 1 5 version : 1.0 preliminary page 3 of 6 www.silikron.com test circuits and waveforms switch waveforms: no tes : the maximum current rating is limited by bond - wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - ambient thermal resistance. the value of r j a is measured with the device mounted on 1in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 3056c ? silikron semiconductor co.,ltd . 2011.0 7 . 1 5 version : 1.0 preliminary page 4 of 6 www.silikron.com mechan ical data dfn 2 x 3 - 8l common dimensions(mm) pkg. w:very very thin ref. min. nom. max. a 0.7 0 0.75 0.80 a1 0.00 0.05 a3 0.2 ref. d 2 .95 3 .00 3 .05 e 1 .95 2 .00 2 .05 b 0.25 0. 30 0.3 5 l 0.25 0. 35 0.45 d2 0.77 0.92 1.02 e2 0.38 0.53 0.63 e 0.65 bcs. notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non - lead sides should be less than 5 mils. 4. dimension l i s measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. t op view bottom view side view bottom view
ssf 3056c ? silikron semiconductor co.,ltd . 2011.0 7 . 1 5 version : 1.0 preliminary page 5 of 6 www.silikron.com ordering and marking information device marking: 3056c package (available) dfn 2 x 3 - 8l operating temperature range c : - 55 to 1 50 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box dfn2*3 - 8 l 3000pcs 10pcs 30000pcs 4pcs 120000pcs
ssf 3056c ? silikron semiconductor co.,ltd . 2011.0 7 . 1 5 version : 1.0 preliminary page 6 of 6 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no re sponsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customers product s or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accid ent s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures incl ude but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be re produced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. i nformation (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refe r to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and serv ice : sales@silikron.com technical support: technical@silikron.com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512) 62560688 fax: (86 - 512) 65160705 e - mail: sales@silikron.com
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